Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam

摘要

In this work, we present a method for targeted, maskless, and scalablefabrication of single silicon vacancy (VSi) defect arrays in silicon carbide(SiC) using focused ion beam. The resolution of implanted VSi defects islimited to a few tens of nanometers, defined by the diameter of the ion beam.Firstly, we studied the photoluminescence (PL) spectrum and optically detectedmagnetic resonance (ODMR) of the generated defect spin ensemble, confirmingthat the synthesized centers were in the desired defect state. Then weinvestigated the fluorescence properties of single VSi defects and ourmeasurements indicate the presence of a photostable single photon source.Finally, we find that the Si++ ion to VSi defect conversion yield increases asthe implanted dose decreases. The reliable production of VSi defects in siliconcarbide could pave the way for its applications in quantum photonics andquantum information processing.